suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 package marking and ordering information device marking device device package reel size tape width quantity 230 2 ssf 230 2 sot - 23 ? 180mm 8 mm 3000 units absolute maximum rat i ngs(ta=25 unless otherwise noted) param eter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v g s 8 v drain c urr e nt - cont i nu o us@ current - p uls e d (note 1) i d (25 ) 2.4 a i d ( 70 ) 1. 7 a i dm 10 a maximum power dissipation p d 0.9 w operating junction and storage temperatu re range t j ,t stg - 55 to 150 thermal characteristics thermal resistance,junction - to - ambient (note 2) r ja 1 40 / w general features v ds = 20v,i d = 2.4 a r ds(on) < 115 m @ v gs =2.5v r ds(on) < 60 m @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package description the ssf 230 2 uses advanced trench technology to provide excellent r ds(on) , l ow gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. application battery protection load switch power management schematic diagram marking and pin assignment sot - 23 top view d g s 1 3 2 g d s 2 3 0 2
suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain - source breakdown voltage bv dss v gs =0v i d = 250 a 20 v zero gate voltage drain current i dss v ds = 20 v,v gs =0v 1 a gate - body leakage current i gss v gs = 8 v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d = 2 50a 0. 65 0.9 5 1 .2 v drain - source on - state resistance r ds(on) v gs = 2 .5v, i d = 3.1 a 70 115 m v gs = 4.5 v, i d = 3.6 a 45 60 m forward transconductance g fs v ds = 5 v,i d = 3.6 a 8 s dynamic characteristics (note4) input capacitance c lss v ds = 10 v,v gs =0v, f=1.0mhz 3 00 pf output capacitance c oss 120 pf reverse transfer capacitance c rss 80 pf switching characteristics (note 4) turn - on delay time t d(on) v dd =10v, r l = 2.8 ? v gs =4.5v,r gen =6 , i d = 3.6 a, 7 15 ns turn - on rise time t r 55 80 ns turn - off delay time t d(off) 16 60 ns turn - off fall time t f 10 25 ns total gate charge q g v ds =10v,i d = 3.6 a,v gs =4.5v 4.0 1 0 nc gate - source charge q gs 0.65 nc gate - drain charge q gd 1.5 nc drain - source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s = 0.94 a 0.76 1.2 v diode forward current (note 2) i s 0.94 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 board , t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 typical electrical and thermal characteristics figure 3 power dissipation t j - junction temperature( ) p d p ower (w) i d - drain current (a ) vds drain - source voltage (v) figure 5 output characteristics v g s r g e n v i n g v d d r l v o u t s d figure 1: switching test circuit v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % figure 2:switching waveforms figure 4 drain current i d - drain current (a t j - junction temperature( ) figure 6 drain - source on - resistance rdson on - resistance ( m ) i d - drain current (a )
suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 figu re 8 drain - source on - resistance normalized on - resistance t j - junction temperature( ) vgs gate - source voltage (v) i d - drain current (a ) figure 7 transfer characteristics vgs gate - source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs vds vds drain - source voltage (v) figure 9 rdson vs vgs rdson on - resistance (m ) vgs gate - source voltage (v) figure 12 source - drain diode forward vsd source - drain voltage (v) i s - reverse drain current (a )
suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance normalized effective transient thermal impedance figure 13 safe operation area i d - drain current (a ) vds drain - source voltage (v)
suzhou goodark e lectronics co., ltd version 1.0 gd ssf 230 2 sot - 23 package information dimensions in millimeters (unit:mm) symbol dimensions in millimeters min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2 .000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 5 m ils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimen sions are not necessarily exact
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